G40H65DFB IGBT FGA40T65 IGBT – Refurbished

G40H65DFB IGBT FGA40T65 IGBT – Refurbished. G40H65DFB IGBT FGA40T65 IGBT. STGWA40H65DFB MOSFET.

Trench gate field-stop 650 V, 40 A high speed HB series IGBT. Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A Tight parameter distribution. Use in Photovoltaic inverters High frequency converters.

• OLD Ok tested
• 100% Working
• Original IGBT ST/ON
• Collector-emitter voltage: 650V
• Continuous collector current: 40A
• Pulsed collector current: 160A
• Gate-emitter voltage: ±20V
• Continuous forward current: 40Amp
• Total power dissipation: 283 Watt

Download STGWA40H65DFB IGBT Datasheet PDF.