IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR IGBT

IRGP4066DPbF INSULATED GATE BIPOLAR TRANSISTOR IGBT

• Features:
  • Low VCE (ON) Trench IGBT Technology
  • Low Switching Losses
  • Maximum Junction Temperature 175 °C
  • 5 μS short circuit SOA
  • Square RBSOA
  • 100% of The Parts Tested for ILM
  • Positive VCE (ON) Temperature Coefficient
  • Tight Parameter Distribution
  • Lead Free Package
• Benefits
  • High Efficiency in a Wide Range of Applications
  • Suitable for a Wide Range of Switching Frequencies due to
  Low VCE (ON) and Low Switching Losses
  • Rugged Transient Performance for Increased Reliability
  • Excellent Current Sharing in Parallel Operation

Absolute Maximum Ratings:

• VCES Collector-to-Emitter Voltage 600 V
• IC @ TC = 25°C Continuous Collector Current 140A
• IC @ TC = 100°C Continuous Collector Current 90A
• ICM Pulse Collector Current, VGE = 15V 225 A
• PD @ TC = 25°C Maximum Power Dissipation 454W
• PD @ TC = 100°C Maximum Power Dissipation 227W