IRGPS66160DPbF Insulated Gate Bipolar Transistor IGBT

IRGPS66160DPbF Insulated Gate Bipolar Transistor IGBT with Ultrafast Soft Recovery Diode.

Applications:

• Welding
• H Bridge Converters

Features:

• Low VCE(ON) and Switching Losses
• Optimized Diode for Full Bridge Hard Switch Converters
• Square RBSOA and Maximum Temperature of 175°C
• Positive VCE (ON) Temperature Co-efficient
• Lead-free, RoHS compliant
• High Efficiency in a Wide Range of Applications
• Package Type Super 247

Absolute Maximum Ratings:

• VCES Collector-to-Emitter Voltage 600 V
• IC @ TC = 25°C Continuous Collector Current 240A
• C @ TC = 100°C Continuous Collector Current 160A
• LM Clamped Inductive Load Current, VGE = 20V  480A
• VGE Continuous Gate-to-Emitter Voltage ±20 V
• PD @ TC = 100°C Maximum Power Dissipation 375W